Description

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 19 nC (typ.)
(3) Small output charge: Qoss = 42 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 2.5 m
Ω (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10
µA (max) (VDS = 40 V)
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, I
D = 0.5 mA)
3. Packaging and Internal Circuit
DPAK
1: Gate
2: Drain (heatsink)

4. Absolute Maximum Ratings (Note) (T
a = 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Single-pulse avalanche current
Channel temperature
Storage temperature
(T
c = 25
(Silicon limit)
(t = 100
µs)
(T
c = 25

(Note 1)
(Note 1), (Note 2)
(Note 1)
(Note 3)
(Note 3)
Symbol VDSS VGSS IDIDIDP PD EAS IAS Tch Tstg
Rating
40 ±20
58
130
400
87
65
58
175
-55 to 175
Unit VAW
mJA
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance (T
c = 25

)
Symbol Rth(ch-c)
Max
1.72
Unit /W
Note 1: Ensure that the channel temperature does not exceed 175

Note 2: Limited 58 A by package capability
Note 3:
VDD = 32 V, Tch = 25
(initial), L = 15
µH, IAS = 58 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.